Top–down fabrication of sub-nanometre semiconducting nanoribbons

Developments in semiconductor technology are propelling the dimensions of devices down to 10 nm, but facing great challenges in manufacture at the sub-10 nm scale. Nanotechnology can fabricate nanoribbons from two-dimensional atomic crystals, such as graphene, with widths below the 10 nm threshold, but their geometries and properties have been hard to control at this scale. Here we find that robust ultrafine molybdenum-sulfide ribbons with a uniform width of 0.35 nm can be widely formed between holes created in a MoS2 sheet under electron irradiation. In situ high-resolution transmission electron microscope characterization, combined with first-principles calculations, identifies the sub-1 nm ribbon as a Mo5S4 crystal derived from MoS2, through a spontaneous phase transition. Further first-principles investigations show that the Mo5S4 ribbon has a band gap of 0.77 eV, a Young’s modulus of 300GPa and can demonstrate 9% tensile strain before fracture. The results show a novel top–down route for controllable fabrication of functional building blocks for sub-nanometre electronics.

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本报讯 目前,以光刻、电子束刻蚀等能量束刻蚀技术为主的纳米制造技术已经突破20纳米节点,最前沿的技术正在渐渐向10纳米分辨率趋近,但要达到可控制造10纳米特征尺寸的结构尚面临巨大挑战且成本极高。


《中国科学报》 (2013-05-07 第2版 国际)

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