Xiaofei Liu and Wanlin Guo. Intrinsic Rashba-like splitting in asymmetric Bi2Te3/Sb2Te3 heterogeneous topological insulator films. Appl. Phys. Lett 105, 082401 (2014)

Applied Physics Letters
Xiaofei Liu and Wanlin Guo Appl.Phys. Lett 105, 082401 (2014) doi: 10.1063/1.4893987
Intrinsic Rashba-like splitting in asymmetric Bi2Te3/Sb2Te3 heterogeneous topological insulator films
Xiaofei Liu and Wanlin Guo

wlguo@nuaa.edu.cn
State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education and Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, People's Republic of China

Dates
Received 16 June 2014
accepted 13 August 2014
published online 25 August 2014

Abstract

We show by density functional theory calculations that asymmetric hetero-stacking of Bi2Te3/Sb2Te3 films can modulate the topological surface states. Due to the structure inversion asymmetry,an intrinsic Rashba-like splitting of the conical surface bands is aroused. While such splitting in homogeneous Bi2Te3-class topological insulators can be realized in films with more than three quintuple layers under external electric fields, the hetero-stacking breaks the limit of thickness for preserving the topological nature into the thinnest two quintuple layers. These results indicate that
the hetero-stacking can serve as an efficient strategy for spin-resolved band engineering of topolog-ical insulators. VC 2014 AIP Publishing LLC.

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