Aligned Growth of Hexagonal Boron Nitride Monolayer Germanium (Small)

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Jun Yin,Xiaofei Liu,Wanglin Lu,Jidong Li,Yuanzhi Cao,Yao Li,Ying Xu,Xuemei Li,Jun Zhou,Chuanhong Jin,Wanlin Guo
DOI: 10.1002/smll.201501439
Aligned Growth of Hexagonal Boron Nitride Monolayer Germanium

State Key Laboratory of Mechanicsand Control of Mechanical StructuresKey Laboratory for Intelligent Nano Materials and Devices of the Ministry of Educationand Institute of Nanoscience
Nanjing University of Aeronautics and Astronautics
Nanjing 210016 , China
E-mail: wlguo@nuaa.edu.cn

Abstract
A hexagonal boron nitride monolayer with aligned orientations is grown on reusable semiconducting germanium. The number of primary orientations of the h-BN domains depends on the symmetry of the underlying crystal face, and Ge (110) gives rise to only two opposite orientations. The structures and electrical properties of grain boundaries between h-BN domains with opposite orientations are also systematically analyzed.

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